| PART |
Description |
Maker |
| 325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM
RIEMEN SYNCHRON HTD L 305MM B 15MM
RIEMEN SYNCHRON HTD L 575MM B 15MM
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 480MM B 30MM
RIEMEN SYNCHRON HTD L 560MM B 200MM
RIEMEN SYNCHRON HTD L 600MM B 200MM
Dual/Triple-Voltage µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 640MM B 200MM
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout
RIEMEN SYNCHRON HTD L 720MM B 30MM
3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE
RIEMEN SYNCHRON HTD L 880MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 200MM
RIEMEN SYNCHRON HTD L 450MM B 15MM
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
2-Wire-Interfaced 8-Bit I/O Port Expander with Reset
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
RIEMEN SYNCHRON HTD L 1100MM B 15MM
RIEMEN SYNCHRON HTD L 980MM B 15MM
RIEMEN SYNCHRON HTD L 1800MM B 15MM
RIEMEN SYNCHRON HTD L 1120MM B 30MM
RIEMEN SYNCHRON HTD L 1120MM B 200MM
RIEMEN SYNCHRON HTD L 1200MM B 200MM
RIEMEN SYNCHRON HTD L 1260MM B 200MM
RIEMEN SYNCHRON HTD L 1600MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 30MM
RIEMEN SYNCHRON HTD L 1420MM B 15MM
RIEMEN SYNCHRON HTD L 1600MM B 30MM
RIEMEN SYNCHRON HTD L 1270MM B 15MM
RIEMEN SYNCHRON HTD L 1200MM B 30MM
RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米
RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米
RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米
RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd.
Amphenol, Corp.
Rubycon, Corp.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| EM48AM1684VTE-6F EM48AM1684VTE-6FE EM48AM1684VTE-7 |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM48AM1684VBB-75F EM48AM1684VBB-75FE EM482M1684VBB |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
http://
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
|
| K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_ |
256MB
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS64T128021HDL-3.7-A HYS64T32000HDL-3.7-A HYS64T6 |
256MB - 2GB, 200pin
|
Infineon
|
